A Model for the Prediction of Semiconductor Heterojunction Discontinuities Using Bulk Band Structures.

Abstract

The problem of theoretically predicting the energy band discontinuities at a semiconductor heterojunction is studied in a simple model. The bulk band structures and their relationship to the periodic electrostatic potential are calculated by a self-consistent pseudopotential technique. A simple matching scheme determines the lineup of the electrostatic potentials at the interface, and this determines the band lineup. The predicted band lineups are in good qualitative agreement with experimentally known lineups, and the model is applied to the prediction of discontinuities for heterojunctions for which no data are available. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1976
Accession Number
ADA032078

Entities

People

  • William Robert Frensley

Organizations

  • University of Colorado Boulder

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Charge Density
  • Computer Programs
  • Conduction Bands
  • Crystal Structure
  • Crystals
  • Differential Equations
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Quantum Mechanics
  • Scattering
  • Semiconductors
  • Solid State Physics
  • Valence Bands

Readers

  • Computational Modeling and Simulation
  • Quantum Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics