Identification of Defects in Compound Semiconductors.
Abstract
Radiation-damaged, ion-implanted, doped, and as-grown semiconducting materials, including CdS, CdSe, CdTe, CdO, ZnS, ZnSe, ZnTe, ZnO, HgS, CuInS2, In2Te3,GaAs, GaAlAs, Si, and Ge, have been examined by photoluminescence, cathodoluminescence, optical absorption, thermal conductivity, magnetic susceptibility, Hall effect, photoconductivity, photomagnetoelectric effect, and nuclear magnetic resonance techniques. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1976
- Accession Number
- ADA032128
Entities
People
- D. C. Look
- Jon M. Meese
- Jose C. Manthuruthil
- Marshall M. Kreitman
Organizations
- University of Dayton