Characterization of III-V Materials
Abstract
The program includes electrical, chemical, structural and topographic characterization as well as device fabrication and evaluation, and is carried out on a coordinated basis by three Navy laboratories: The Naval Research Laboratory, the Naval Surface Weapons Center and the Naval Electronics Laboratory Center. The primary goals of the effort continue to be: (1) to provide rapid and interactive feedback of routine characterization information to the materials growth effort, and (2) to develop new, innovative methods for material characterization. Characterization techniques described include routine Hall effect measurements, photoconductivity, contactless microwave magnetoconductivity, contactless infrared optical measurements of carrier density and mobility, scanning electron microscopy, soft x-ray appearance potential spectroscopy, photoluminescence of bulk and interface states, and fabrication and test of Schottky barrier field effect transistors. Results achieved with these techniques on GaAs and InP materials produced in-house and provided by commercial laboratories are described.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1976
- Accession Number
- ADA032284
Entities
People
- B. D. McCombe
Organizations
- United States Naval Research Laboratory