Improvement of Electronics Reliability by RF Sputtering Techniques.

Abstract

Electromigration in rf sputtered films of aluminum-copper alloys was documented. Copper content was 1%, 8%, and 12% nominally. At less than 200 C and current densities of less than 3 million amps/cm2 the films with 1% copper exhibited significantly longer life than the films with higher copper content. Beryllium oxide was sputtered from a BeO target and reactively from a beryllium target. Constitutive stress were reduced until the films deposited on silicon were dominated by thermal stresses. Heat-sinking with gallium proved to be extremely difficult in the presence of the activated oxygen species introduced during sputtering. Films approximately 0.001 inch thick were deposited on Ga As substrates without thermal stress cracking. Columnar growth of the beryllium oxide was observed in all cases. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1976
Accession Number
ADA032441

Entities

People

  • D. H. Grantham
  • J. L. Swindal

Organizations

  • United Technologies Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Alloys
  • Copper Alloys
  • Current Density
  • Electron Emission
  • Electronics
  • Electronics Laboratories
  • Failure Mode And Effect Analysis
  • Geography
  • Heat Transfer
  • Integrated Circuits
  • Materials
  • Materials Laboratories
  • Mechanical Properties
  • Oxide Films
  • Semiconductor Devices
  • Semiconductors
  • Thermal Stresses

Readers

  • Electronics Engineering
  • Structural Health Monitoring of Composite Structures.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene