Theory of Shallow Donor States with a Strong Central Cell Perturbation
Abstract
A new theory for shallow donor states with a strong central cell perturbation is presented. The impurity wave function is expanded in terms of generalized Wannier functions, equivalent to the eigenfunctions of the periodic lattice with the strong central cell perturbing potential. The single unknown parameter of this theory can be fitted by comparison with the observed binding energy. The theory is applied to the impurity states of As, P and Sb in Silicon. The Fermi contact constants for the Si29 lattice nuclei surrounding the impurity are calculated and compared to the ENDOR experiments of Hale and Mieher and to recent calculations, using a different method, by Ivey and Mieher. Some elucidations of the theory of Ivey and Mieher are offered. In contrast to the conclusions of these authors, it is found that a suitable form of the Effective Mass Theory can account for the observations within an accuracy of about 10-15%.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1976
- Accession Number
- ADA032570
Entities
People
- Joan R. Onffroy
Organizations
- University of California, San Diego