Noncoplanar High Power FET.

Abstract

Buried-insulating-layer, noncoplanar FETs have been fabricated by growth of insulating regions into GaAs substrates and subsequent processing to produce transistors for which the substrate becomes the common source electrode. These devices were operated as amplifiers up to 7 GHz, trap-filled-limit (TFL) breakdown was observed for the O2-doped insulating material with the drain biased positive. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 19, 1975
Accession Number
ADA032809

Entities

People

  • D. R. Decker
  • S. G. Bandy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Capacitance
  • Electrodes
  • Electrons
  • Elements
  • Fabrication
  • Field Effect Transistors
  • Free Electrons
  • Geometry
  • High Temperature
  • Low Noise
  • Low Temperature
  • Materials
  • Microwave Amplifiers
  • Microwave Networks
  • Microwaves
  • Transistors

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene