Manufacturing Methods and Technology Engineering High Efficiency, High Power Gallium Arsenide Read-Type IMPATT Diodes.

Abstract

Controlled tests have shown that uniformity of diode parameters is largely due to the degree of uniformity in the starting wafer. The nominal characteristics are influenced by diode assembly processes, however. Diode efficiency is slightly improved by using ribbon in place of mesh on the diode junction metallization. The fourth set of engineering samples have met all of the contract specifications. One X-band failure occurred during the third operating life test. There were no failures at Ku-band. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1976
Accession Number
ADA033479

Entities

People

  • H. R. Chalifour
  • S. R. Steele

Organizations

  • RTX

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Facilities
  • California
  • Electronic Components
  • Electronics
  • Electronics Laboratories
  • Engineering
  • Fabrication
  • Heat Sinks
  • Life Tests
  • Manufacturing
  • Massachusetts
  • Materials
  • New Jersey
  • New York
  • Production Engineering
  • Semiconductors
  • United States

Readers

  • Electronics Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics