Advanced Development on Gallium Phosphide Materials for Satellite Attitude Sensors.
Abstract
The objective of this research program is to develop the solution-growth technology of GaP so that crystals of sufficient size and uniformity can be produced for Air Force photodetector applications. To accomplish this objective two growth techniques, bulk solution growth (BSG) and liquid phase epitaxy (LPE) have been developed. Undoped and copper doped LPE layers were grown. These layers were characterized by standard C-V and photoconductivity analysis. In the bulk solution growth technique GaP is dissolved at the top of a crucible of Ga, the phosphorus transports by diffusion to the bottom of the crucible which is cooler, and a GaP crystal grows from the saturated solution. A BSG growth apparatus was developed with which large area crystals of GaP have been grown. Hall analysis of these crystals shows that the majority carrier concentration is uniform to within + or - 10%. The temperature dependence of the mobility of both n- and p-type BSG grown samples has been measured. IR spectroscopy and oscillatory photoconductivity and Hall analysis has been used to identify the principal impurities in both n- and p-type BSG GaP. Photocapacitance techniques have been used to study deep levels in both BSG and LPE GaP.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1976
- Accession Number
- ADA033640
Entities
People
- M. W. Scott
- P. E. Petersen
- R. G. Schulze
Organizations
- Honeywell International, Inc.