Determining Impurities in Gallium Phosphide by Analyzing Cathodoluminescence.

Abstract

The cathodoluminescence emission spectra of four GaP samples, three grown by a liquid phase epitaxial(LPE) process and the fourth bulk solution grown(BSG), was studied in order to identify impurities present in the samples. The samples were excited by a 20 kV, 1.0 microampere electron beam; and the spectra, photoelectrically detected, were recorded at various sample temperatures between 8 K and 100 K using liquid helium and liquid nitrogen as coolants. The impurities, identified by comparison with the literature, were S, N, C, Si, and O. In addition, two of the samples showed the presence of Cu although only one sample was intentionally Cu doped. The cathodoluminescence procedure was found to be as sensitive and effective as the photoluminescence procedure in detecting impurities, and the LPE process appeared to produce the purest samples. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1976
Accession Number
ADA034002

Entities

People

  • James C. Slavicek

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Compound Semiconductors
  • Conduction Bands
  • Crystal Defects
  • Crystal Lattices
  • Detectors
  • Electron Beams
  • Electrons
  • Emission Spectra
  • Energy Bands
  • Energy Gaps
  • Gallium
  • Materials
  • Materials Laboratories
  • Optical Properties
  • Semiconductors
  • Silicon Carbide

Readers

  • Materials Science and Engineering.
  • Regression Analysis.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics