Depth-Resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide.
Abstract
Ten samples of GaAs were examined by depth-resolved cathodoluminescence at temperatures of 10 K and 80 K. Electron beam energies from 1.0KV to 25KV were used. Both cold and hot, 135KV, Cd-implanted GaAs samples with Si3N4 caps were studied. A sample of the n-type GaAs substrate was used as a control. Spectra were obtaining showing the ion implantation damage layers. The unannealed samples damage layer boundaries were calculated at 0.01 micrometers, 0.24 micrometers, 0.37 micrometers, and 0.61 micrometers for fluences of 10 to the 12th power ion/sq cm, 10 to the 14th power ion/sqcm, 10 to the 15th power ion/sqcm, and 10 to the 16th power ion/sqcm respectively. For fluences > or = 10 to the 14th power ion/sq cm and 800 C, 15 minute anneal in flowing argon gas was not sufficient to completely remove the damage layer. An emission peak at 1.488eV changed in energy by only 0.001 eV between 10 K and 80 K, and was assigned to a donor-Cd acceptor recombination. A peak approximately 0.010eV above the band gap energy was observed in many of the implanted samples. Peaks at 1.4eV, 1.41eV, 1.39eV, and 1.35eV increased in intensity upon annealing and were assigned to vacancies, which were enhanced during annealing. The major conclusion reached was that depth-resolved cathodoluminescence was an excellent non-destructive method of sharply defining damage layers produced by ion implantation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1976
- Accession Number
- ADA034029
Entities
People
- Joseph D. Dumoulin
Organizations
- Air Force Institute of Technology