Annual Report.
Abstract
This report covers work on a 12 month (Phase 1) program which had the objective of developing a FET and amplifiers covering the 7-15 GHz range. A 0.5 micron gate FET was successfully developed and the amplifiers were delivered on schedule. Technology development to improve FET performance as well as new techniques in amplifier design are discussed in this report. FET performance, materials development, and amplifier components are also described in detail.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 24, 1976
- Accession Number
- ADA034682