1/F Noise in Amorphous GeTe.

Abstract

An experiment designed to determine the 1/f noise power of amorphous semiconductors in the presence of electrode noise is described. Results of measurements of the room temperature current noise power spectral density of amorphous GeTe are presented.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1976
Accession Number
ADA035105

Entities

People

  • K. Peter Scharnhorst

Organizations

  • Naval Ordnance Laboratory

Tags

Communities of Interest

  • C4I
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Carrier Mobility
  • Crystal Structure
  • Detection
  • Electrodes
  • Electronics
  • Electronics Laboratories
  • Films
  • Frequency
  • Low Noise
  • Materials
  • Measurement
  • Physical Properties
  • Resistance
  • Semiconductors
  • Standards
  • Surface Properties
  • Thickness

Fields of Study

  • Physics

Readers

  • Acoustics.
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene