Study of Ion Implanted Silicon Surface Using Acousto-Electric Voltage.
Abstract
Surface acoustic wave delay lines with semiconductor on LiNbo3 structure were used for the study of surface potential barriers of ion implanted silicon samples. To achieve the same preparation condition and the same surface treatment, two ion implanted silicon samples were made from a 10 ohm-cm N-type silicon wafer with a (100) surface orientation. Boron ions were implanted to different depths, 1200 A and 3200 A for these two samples. A 10 ohm-cm N-type silicon with a high quality surface was also prepared for comparison and reference. Acousto-electric voltage with acoustic power of variable input was investigated for surface study of these three samples. For those samples which are implanted, the results show a large change in transverse acousto-electric voltage. Using light of variable intensity to illuminate the surface of the sample through the LiNO3, we can obtain a qualitative measure of the surface state density and charge carrier density at the surface. It is also found that the inversion layer produced by implantation moves toward the surface as the light intensity increases. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 29, 1976
- Accession Number
- ADA035116
Entities
People
- M. E. Motamedi
- Protik Das
- R. Bharat
Organizations
- Rensselaer Polytechnic Institute