Bulk and Interface Imperfections in Semiconductors.
Abstract
Some of the eight new techniques, using the space charge layer of a p-n junction, Schottky barrier and a MOS capacitor to determine the properties of imperfection centers, are discussed. These are the depletion layer dark and photo current and capacitance transients, the edge layer dark and photo capacitance transients, the thermally stimulated current and capacitance. A variety of initial charge states of the traps can be set by switching the junction bias, using thermal or photo excitation of the trapped charges, and by injection of the photogenerated carriers on the surface or by injection from a forward biased emitter junction. These new measurement techniques will provide extensive and accurate data on the kinetic parameters of the recombination, generation and trapping processes to improve our understanding of the bound states in semiconductors. They can also be used to monitor silicon integrated circuit processes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1976
- Accession Number
- ADA035151
Entities
People
- C. T. Sah
Organizations
- University of Illinois Urbana–Champaign