Development of Apparatus for Performing Rapid Capacitance-Voltage Measurements on MIS Structures.

Abstract

This report discusses the design of a complete experimental system for the observation of radiation effects in metal-insulator-semiconductor (MIS) CAPACITORS BY USE OF A RAPID, REPETITIVE CAPACITANCE-VOLTAGE (C-V) measurement technique. The apparatus includes trigger and control-signal generators, bias voltage sources, a sample holder with temperature control and radiation dosimetry, and a high-speed sample capacitance monitor. In typical operation, this apparatus repetitively measures the C-V characteristics of an MIS capacitor at intervals spaced logarithically in time from 0.1 ms to 800 s, after a radiation pulse. Characteristics and operating principles of the major system components are discussed and sample test results are presented. (author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1976
Accession Number
ADA035249

Entities

People

  • H. Edwin Boesch Jr

Organizations

  • Harry Diamond Laboratories

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Birds
  • Composite Materials
  • Detectors
  • Diagrams
  • Electron Beams
  • Electronic Switches
  • Ionizing Radiation
  • Jet Propulsion
  • Navy
  • Phase Detectors
  • Pulse Generators
  • Schematic Diagrams
  • Semiconductor Devices
  • Semiconductors
  • Signal Generators
  • Test And Evaluation

Readers

  • Electrical Engineering
  • Regression Analysis.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems
  • Space
  • Space - Hall-Effect Thruster