Low Temperature Pressure-Oxidation of Silicon for Integrated Circuit Technology,
Abstract
It was reasoned that dry oxygen pressures above 1 atm would appreciably accelerate the oxidation of silicon, thereby leading to lower oxidation temperatures, reduced defect concentrations, and improved electrical properties. Special apparatus has been developed, and careful experimentation has demonstrated that oxidation temperatures can be lowered as much as 400C by using only 140 atm dry oxygen pressure, i.e., a pressure lower than that contained in commercial bottled gas cylinders. Measurements have shown that the resultant oxidized material has a stable flat-band voltage, consistently low fixed surface-state-charge density, high dielectric strength, and a generally lower defect concentration relative to conventionally processed silicon. The use of pressure-oxidation (P-OX) to obtain oxide-isolated integrated circuits on sapphire to meet military requirements for low power and radiation hardening was demonstrated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1977
- Accession Number
- ADA035266
Entities
People
- Charles D. Bosco
- Clarence G. Thornton
- Eugene Hryckowian
- Robert J. Zeto
Organizations
- United States Army Communications-Electronics Command