Synthesis of Indium Phosphide,
Abstract
Indium phosphide is a compound of great interest both as a III-V semiconductor and as a substrate material for epitaxy. It is a difficult material to synthesize with sufficient purity. Techniques reported here appear to have solved the synthesis problem, and have produced high-purity material in sufficient quantity for the growth of single crystals. They may also be applicable to the synthesis of other III-V compounds. There remains a problem that must be solved before the method is considered reliable: explosions occasionally occur during product cooling.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1976
- Accession Number
- ADA035507
Entities
People
- J. Adamski
- J. Sampson
- N. Klausutis
Organizations
- Rome Laboratory