Inverse Mean Free Path, Stopping Power, CSDA Range, and Straggling in Ge and GaAs for Electrons of Energy Less Than or = 10 keV.
Abstract
The interaction of electrons with the solids Ge and GaAs is described based on a model insulator theory for the valence band electrons and inner shell ionization derived from classical-binary-collision cross sections. Contributions to the inverse mean free path and stopping power from the various interaction processes are tabulated for electron energies from threshold (approximately 2 eV for Ge and approximately 2.5 eV for GaAs) to 10 keV. Electron range in the continuous slowing-down approximation and straggling are tabulated for electron energies from 10 eV to 10 keV for both materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1976
- Accession Number
- ADA035511
Entities
People
- C. J. Tung
- J. C. Ashley
- R. H. Ritchie
- V. E. Anderson
Organizations
- Oak Ridge National Laboratory