Vertical Channel Metal-Oxide-Silicon Field Effect Transistor.

Abstract

Silicon vertical-channel MOS-transistors (VMOST) have been designed and fabricated which exhibited high power capabilities (approaching 5 watts) at frequencies up to 1.5 GHz. Some problems with excess input parasitic capacitance still exists to limit the frequency response of the device, even though significant reductions of parasitic source and gate resistances and feedback capacitance have been achieved. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1975
Accession Number
ADA036348

Entities

People

  • D. A. Tremere
  • J. G. Oakes
  • R. A. Wickstrom
  • T. M. S. Heng

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Capacitance
  • Computer Simulations
  • Evaporation
  • Feedback
  • Field Effect Transistors
  • Frequency
  • Frequency Response
  • Geometry
  • Materials
  • Military Research
  • New York
  • Radio Frequency Power
  • Resistance
  • Transistors
  • United States
  • United States Government

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.