MOS Transistor Drivers for Large Capacitive Loads.
Abstract
The advent of MOS large-scale integration (LSI) has focused considerable research activity into studying the compromises involved in efficient integrated circuit design. These trade-offs may involve circuit size, device parameters, circuit speed, and extra processing steps. Available chip size, manufacturing tolerance, and cost place upper and lower limits on the range each of these can take. There may also be some concern about requiring several voltage sources or complicated clocking sequences which cannot be derived on the chip. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1976
- Accession Number
- ADA036362
Entities
People
- Paul Fielding Smith
Organizations
- University of Illinois Urbana–Champaign