Effect of Lapping Parameters on Generation of Damage on Silicon Nitride Ball Surfaces.

Abstract

This is the final report on the effect of lapping parameters on generation of damage on silicon nitride ball surfaces. Two rough lapping experiments were conducted using 44 micrometers SiC and 15 micrometers diamond abrasives in free and controlled quantities and with various unit ball loads. The results indicate that, under the test conditions chosen, diamond generates a more uniform finer surface finish compared to the SiC and provides a larger increase in material removal rate with increase in unit ball load. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1976
Accession Number
ADA037485

Entities

People

  • Harish M. Dalal
  • J. W. Rosenlieb
  • L. B. Sibley

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abrasives
  • Assembly
  • Ceramic Materials
  • Chemistry
  • Compound Semiconductors
  • Fatigue Life
  • Fatigue Tests (Mechanics)
  • Finishes
  • Manufacturing
  • Materials
  • Materials Science
  • Numbers
  • Particle Size
  • Particles
  • Roughness
  • Silicon Carbide
  • Surface Roughness

Fields of Study

  • Physics

Readers

  • Graph Algorithms and Convex Optimization.
  • Thin Film Deposition Science.