Surface Study of Semiconductor Devices.

Abstract

ESCA studies of Pb(1-x)Sn(x)Te and a few InAs(1-X)Sb(x) surfaces are reported. A diode array structure has been developed to facilitate the correlation of surface composition and surface leakage currents. ESCA results establish that elemental tellurium layers form on several semiconductor tellurides. It is shown that these tellurium layers on Pb(1-x)Sn(x)Te diodes produce exceptionally low surface leakage currents at 77 K which suggests that elemental Te may be a surface passivant for Pb(1-x)Sn(x)Te. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Mar 06, 1977
Accession Number
ADA037502

Entities

People

  • R. W. Grant

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accuracy
  • Chemistry
  • Compound Semiconductors
  • Diffraction
  • Electrons
  • Intensity
  • Materials
  • Measurement
  • Photoelectrons
  • Photographs
  • Semiconductor Devices
  • Semiconductors
  • Solid Solutions
  • Spectra
  • Surface Chemistry
  • Surface Properties
  • X Rays

Fields of Study

  • Materials science

Readers

  • Electrochemical Surface Science
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene