Planar CMOS/SOS Array Development.
Abstract
Three techniques for planarizing silicon-on-sapphire epitaxial islands are investigated. These three approaches are thermal oxidation isolation, ion-implantation isolation, and SIS (silicon-in-sapphire). N-channel MOS transistors fabricated using thermal oxidation isolation exhibit large edge leakage currents and are bias-temperature unstable. Stable p-channel MOS transistors can be fabricated if the field oxide is grown below 950 C in HCl steam. Test transistors fabricated using ion-implantation isolation show very large edge leakage current.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1976
- Accession Number
- ADA037752
Entities
People
- Charles E. Weitzel
Organizations
- RCA Corporation