Investigation of Defects and Impurities in Silicon-on-Sapphire.
Abstract
With the use of silicon-on-sapphire (SOS) in the manufacture of MOS/LSI circuitry rapidly approaching reality for military applications, the problem of nonuniform and inconsistent quality from lot-to lot and wafer-to wafer in commercially available SOS material must be dealt with. The first phase of this program examines the relationship between defects and impurities in the sapphire starting material and the quality of devices fabricated in silicon films grown on the sapphire. The quality of the sapphire was examined using selective etching, X-ray topography, ion-microprobe-mass-analyzer (IMMA), and scanning electron microscope. Device quality was determined on the basis of yield, electrical parameters, and radiation hardness of CMOS inverters. Sapphire growth, sapphire polishing, and Si film growth were done by several manufacturers in different combinations, and the results of the different combinations of manufacturers compared. The second phase of the program investigated the relationship between different pre-epitaxial treatments of the sapphire and CMOS device quality.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1976
- Accession Number
- ADA037753
Entities
People
- Frieda F. Mittelbach
- J. L. Peel
- Jan E. A. Maurits
- Ross A. Williams