Semiconductor Conductivity Measurements using a High-Sensitivity Microwave Technique
Abstract
An experimental study of a microwave reflection arrangement used to measure changes in the conductivity of semiconductor samples is presented. A germanium sample with associated microwave circuitry acts as a highly sensitive system whereby in the null condition almost complete absorption occurs. Changes in conductivity from the null point will cause a sharp increase in reflected microwave power. This technique will allow electrodeless measurements of both bulk and thick-film semiconductor properties and may have application as a large-area detector of infrared radiation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1974
- Accession Number
- ADA037870
Entities
People
- H. Jacobs
- R. F. Giordano
- S. Dixon Jr.
Organizations
- United States Army Communications-Electronics Command