Ion Implantation in Compound Semiconductors.
Abstract
Ion implantation has been investigated as a method of controlled doping of compound semiconductors. Ion implantation into III-V and II-VI compounds has been performed. Analysis of the as grown, implanted, and annealed specimens has been performed with a variety of characterization techniques. The development of some new experimental capabilities is discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1977
- Accession Number
- ADA037958
Entities
People
- Bok Kyoon Shin
- Elward T. Rodine
- Ronald R. Berliner