Gallium Arsenide Development for High Power Microwave Sources,

Abstract

Liquid phase epitaxy (LPE) of Gallium Arsenide conducted at RADC beginning in FY 74 is summarized. A detailed description of the growth procedures using a graphite slider boat is presented. The results of various growth schedules using the graphite slider are given with the conclusion that growth above 800 C is too highly compensated (yields material with too many impurities). (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1977
Accession Number
ADA038052

Entities

People

  • Joseph M. Milan

Organizations

  • Rome Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Growth
  • Crystal Structure
  • Crystals
  • Epitaxial Growth
  • Gallium Arsenides
  • Graphitic Materials
  • High Power Microwaves
  • Laser Diodes
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Liquids
  • Materials
  • Measurement
  • Phase
  • Research Facilities
  • Single Crystals
  • Voltage

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy
  • Microelectronics