Study of Electronic Transport and Breakdown in Thin Insulating Films
Abstract
Recent progress is reported on an ongoing program of studies of high- field electronic injection, transport, trapping, and dielectric breakdown in thin insulating films. The studies include the use of combined corona and optical techniques for the investigation of carrier injection, transport, and trapping; a study of the charge-carrier recombination properties of SiO2 and the Si-SiO2 interface; an investigation of the high-field generation of electron traps in MOS structures; a study of high-field breakdown effects in aluminum oxide; and an investigation of electron-beam-induced interface states in the Si- SiO2 system.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1976
- Accession Number
- ADA038085
Entities
People
- Walter C. Johnson
Organizations
- Princeton University