A Tentative Model of the Si-SiO2 Interface.

Abstract

A model of the electronic density of states in a metal-insulator-semiconductor structure is proposed. The model is based upon current theories of the electronic properties of amorphous materials and disordered alloys. The model accounts for the presence of 'band-tial' states at the insulator-semiconductor interface and also speculates about the presence of states in the oxide as being due to persistent silicon conduction and valence bands. The derivation of the admittance of a metal-oxide-semiconductor capacitor with a distribution of the interface states is reviewed, and an interpretation of these states employing the macroscopic theory of Brews is later derived. It is shown how these states can be measured by a quasi-static capacitance voltage measurement. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1977
Accession Number
ADA038540

Entities

People

  • Martin M. Sokoloski

Organizations

  • Harry Diamond Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amorphous Materials
  • Bulk Semiconductors
  • Capacitance
  • Capacitors
  • Charge Carriers
  • Crystal Structure
  • Dielectrics
  • Electrical Properties
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Materials
  • Measurement
  • Metal Oxide Semiconductors
  • Semiconductor Junctions
  • Semiconductors
  • Valence Bands

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene