Monolithic Laser.
Abstract
This report describes the accomplishments of the third phase of the research program carried out under Contract No. N00014-73-C-0288 to develop the first prototype integrated optical transmitter. A new monolithic laser structure called an I-bar mesa laser was demonstrated. This double heterojunction GaAs/GaAlAs laser was grown by selective liquid phase epitaxy. The best devices operated at 525 mA drive current with a pulsed, 300 K threshold current density of 7.5 kA/sq cm. Methods of fabricating these devices are discussed. Also, various types of grown waveguides including bends and Y's were demonstrated. For bends, a 3 dB signal attenuation is observed at a radius of curvature of approximately 1.3 mm (50 mils). This radius appears to be a practical lower limit for integrated optical circuit waveguides. The I-bar mesas were combined on a chip with a grown three-layer waveguide. Measured intensity of light transmitted by end-firing from the laser through the curved waveguide was 35% of the laser emission with a narrowband output. Also, etched double heterojunction mesa laser structures were fabricated on underlying waveguides. The emission from these lasers was evanescently coupled to this guide. A coupling of 25% of the laser emission to the guide was observed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1977
- Accession Number
- ADA038792
Entities
People
- D. W. Bellavance
- J. C. Campbell
- Kenneth L. Lawley
Organizations
- Texas Instruments