Metal-Insulator-Semiconductor Studies of Lead Telluride.
Abstract
The capacitance and conductance-voltage characteristics were measured on metal-insulator-semiconductor capacitors fabricated with zirconium dioxide films on single-crystal lead telluride. At 77 K, on both n- and p-type substrates, evidence of surface potential control was obtained. Comparison of the measured capacitance-voltage characteristics with those calculated from the equilibrium solution of the one-dimensional Poisson equation indicates qualitative agreement, although the slope (dC/dV) of the measured capacitance in the region near the capacitance minimum is less steep than calculated. The high-frequency response of the capacitance and position of the capacitance minimum were used to deduce the presence of an inversion layer on some n-type substrates of charge density approximately 5.0 times 10 to the 13th power per sq cm2. This layer was found to be dependent on surface preparation treatment prior to insulator deposition. Results of surface chemical studies indicate that inversion may be due to oxide formation during chemical etching. Conductance data obtained confirm the existence of a large interfacial state density.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 07, 1977
- Accession Number
- ADA038996
Entities
People
- David A. Lilly
- David E. Joslin
- H. K. Alan Kan
Organizations
- The Aerospace Corporation