Charge Yield and Dose Effects in MOS Capacitors at 80 K.
Abstract
The response of metal-oxide semiconductor capacitors to short-pulse high-energy electron irradiation was measured at 80 K. It was confirmed that radiation-generated holes are almost totally retained in the SiO2 layer regardless of oxide processing; this retention was exploited to determine carrier yield as a function of applied electric field. Evidence was found that the holes undergo an initial displacement under an applied field immediately following carrier generation (9.5 nm at 1,000,000 V/cm). Samples were subjected to pulsed irradiation at 80 K to accumulated doses above 1,000,000 rads (SiO2) and mechanisms which limit hole buildup above 50,000 rads (SiO2) were explored. Electron-hole recombination in a low field region of the SiO2 was identified as an important process and was modeled. Other mechanisms discussed include electron injection, field- and temperature-activated hole transport, applied field collapse, and dielectric breakdown. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1977
- Accession Number
- ADA039537
Entities
People
- Harold E. Boesch Jr.
- James M. Mcgarrity
Organizations
- Harry Diamond Laboratories