Effects of Low-Temperature Neutron Irradiation on Arsenic-Doped Silicon.
Abstract
Arsenic-doped silicon material obtained from LWIR detector manufacturers (Aerojet and Rockwell) or a supplier of these manufacturers (High Performance Technology) was irradiated with neutrons at 10K, and the optical response and electrical properties were measured. The material was of the grade from which quality LWIR detectors could be fabricated. The primary effect of irradiation was the net introduction of acceptor centers at a rate of approximately 16/cm. This introduction rate was independent of oxygen concentration in the material, but its dependence on arsenic or acceptor concentration was not determined in this program. The primary effect of the radiation-induced acceptors is to compensate the arsenic levels, which decreases the majority-carrier lifetime and thus the responsivity. The acceptors also decrease the carrier concentration at low temperature. Irradiation-induced mobility changes are relatively slight, showing that the low-temperature mobility prior to irradiation is primarily set by neutral impurity scattering. Some band tailing is produced by the radiation, but this is unstable and anneals to a large extent by 100K. It is replaced by a short-wavelength depression (or a long-wavelength enhancement) in the spectral response, which may be another manifestation of the same defects. In general, the damage effects were quite stable, and few changes were observed in the measured properties up to annealing temperatures of 400C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1977
- Accession Number
- ADA039947
Entities
People
- A. H. Kalma
- C. J. Fischer