Multi-Layer Model of InAs Epilayers.
Abstract
The charge carrier transport coefficients of an inhomogeneous, thin semiconductor in an indium arsenide MOS structure were obtained using a multilayer model. The expression for the Hall coefficient of a three-layer system extended to arbitrary strength magnetic fields was used to separate the bulk transport parameters from the parameters describing transport at the two surfaces. Experimentally, a gate voltage was used to vary the surface under the oxide from depletion to accumulation and the Hall coefficient measured as a function of magnetic field. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 15, 1977
- Accession Number
- ADA040028
Entities
People
- H. A. Washburn
Organizations
- Colorado State University