Technology and Physics of Infrared and Point Contact Diodes
Abstract
Masks were obtained to make the far infrared holographic antenna/ diode array which had been designed earlier. Fabrication parameters were investigated, and a procedure was established. Electrical characteristics of the junctions are described. Most good arrays are matched in resistance within a factor of two. About 20 microvolts of rectified voltage was obtained from one of these early junctions with far infrared radiation focused on the antenna. Response of Al-Al203-Pb junctions to visible laser radiation at liquid helium temperature has been studied. Attempts to observe negative resistance in Sn-SnO- Pb junctions were frustrated by junction damage during the process of soldering test leads to the contact pads. A point contact mixer assembly for adjustment and use at liquid helium temperature has been designed and fabrication begun. Two patents covering optical addressing of high speed memory devices were refiled with the U.S. Patent Office, and patents were filed in Germany and Japan.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1977
- Accession Number
- ADA040050
Entities
People
- Ali Javan
Organizations
- Massachusetts Institute of Technology