EMP Response and Damage Modeling of Diodes, Junction Field Effect Transistor Damage Testing and Semiconductor Device Failure Analysis
Abstract
Engineering type damage models to predict both surge impedance and failure levels of silicon semiconductor diodes when exposed to EMP type environments were developed from multiple regression analyses of a large experimental data base which was supplied by the U.S. Army/HDL and the U.S. Air Force/AFWL. The models were developed for both forward and reverse polarities of junction current conduction. The models are expressed in terms of published device parameters and, as such, do not require a 'hands on' device evaluation. The models were developed both for conditions where the device construction was unknown and for conditions where specific device construction is known. Separate models were developed for devices functionally classified as 'rectifiers, diodes and switches' and for devices functionally classified as 'non-temperature compensated zener diodes'. this study was undertaken to provide a supplement to the damage modeling techniques presently contained in the DNA EMP Handbook, Report No. DNA 2114H.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1976
- Accession Number
- ADA040154
Entities
People
- Dante M. Tasca
- Samuel J. Stokes Iii
Organizations
- General Electric