Analysis of Semiconductor Structures by Nuclear and Electrical Techniques.
Abstract
MeV backscattering spectrometry and x-ray diffraction are used to investigate the behavior of sputter-deposited Ti-W mixed films on Si Substrates. During vacuum anneals at temperatures of 700 C for several hours, the metallization layer reacts with the substrate. Backscattering analysis shows that the resulting compound layer is uniform in composition and contains Ti, W and Si. The Ti:W ratio in the compound corresponds to that of the deposited metal film. X-ray analyses with Read and Guinier cameras reveal the presence of the ternary Ti(x)W(1-x)Si2 compound. Its composition is unaffected by oxygen contamination during anneal, but the reaction rate is affected. The rate measured on samples with about 15% oxygen contamination is linear, of the order of 0.5 A/sec at 725 C, and depends on the crystallographic orientation of the substrate and the d-c bias during sputter deposition of the Ti-W film.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1977
- Accession Number
- ADA040361
Entities
People
- James W. Mayer
- Johnson O. Olowolafe
- Joseph M. Harris
- Marc-a. Nicolet
- Silvanus S. Lau
Organizations
- California Institute of Technology