Transverse TELDs (Transferred-Electron Logic Devices).

Abstract

The development of a computer-aided analysis for two-dimensional transient simulations of planar GaAs logic devices utilizing the transferred-electron effect is described. The effects of the semi-insulating substrate, diffusion, a Schottky-barrier gate, and the nonlinearity velocity-field relationship are included. The analysis is applied to two- and three-terminal GaAs devices. The switching properties of three-terminal devices are studied both for anode loading and cathode loading. A delay of about 30 ps is obtained with gain for anode loading and for above-threshold-value gate input voltage. Three designs of transverse-domain-spreading (TDS) logic devices useful for an exclusive-OR circuit are analyzed. The shortest output delay is 20 ps and occurs for a TDS device with a control anode and capacitive output electrode. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1977
Accession Number
ADA040629

Entities

People

  • W. R. Curtice

Organizations

  • RCA Corporation

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Anodes
  • Charge Density
  • Computer Simulations
  • Computers
  • Diffusion Coefficient
  • Electric Fields
  • Electrons
  • Equations
  • Field Effect Transistors
  • Gates
  • Geometry
  • Metal-Semiconductor Junctions
  • Semiconductors
  • Stratified Fluids
  • Transistors
  • Two Dimensional
  • Waveforms

Readers

  • Integrated Circuit Design and Technology.
  • Mechanical Engineering/Mechanics of Materials.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics