Computer Simulation of the Sputtering of Silicon.
Abstract
Simulation models were developed for the bombardment of the (100), (110), and (111) orientations of a single-crystal silicon lattice by an argon ion. The interatomic potentials included repulsive terms only, and were approximated in closed analytic form by least-squares fitting of the calculated interatomic potentials obtained from the Hartree-Foch-Slater self-consistent field equations. Sputtering was found to be predominantly a surface effect with most sputtering events occurring in the first three crystal layers. The (110) orientation demonstrated a sputtering mechanism not previously observed in fcc copper simulations, and the (111) orientation showed that reflection of the knock-on atom from lower crystal layers is more common in silicon than in the fcc copper lattice. Adjustment of the surface binding energy parameter to a value of 4-7 eV produced results which agree with available experimental data. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1977
- Accession Number
- ADA041152
Entities
People
- Gary Lloyd Smith
Organizations
- Naval Postgraduate School