1.06 Micrometer Avalanche Photodiode Detector
Abstract
Satellite laser communications at gigabit data rates based on the Nd- YAG laser are of great interest to the Air Force. In this report, the development of a complete solid state 1.06 micrometers optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short-pulse detection, is described. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low-noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in the negative feedback 'transimpedance' mode. The inverted homo-heterojunction GaAs(1-x)Sb(x) avalanche photodiodes developed in this program give 1.064 micrometers quantum efficiencies over 96%, and for typical 3 mil diameter devices, have bulk leakages of about 300 pA, total leakages of about 3nA at -50 volts bias, and junction capacitances of only Cj=0.1pf.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1977
- Accession Number
- ADA041224
Entities
People
- Richard C. Eden