Indium Phosphide Gunn Devices, 26-40 GHz.
Abstract
This report covers the period from 1 November 1975 through 31 October 1976 on a research and development program for low noise wideband InP Gunn devices for use in the 26.5 to 40 GHz band. Other performance objectives were: instantaneous bandwidth, 5 GHz; noise figure, 7-9 dB; minimum gain (over 5 GHz), 6 dB. Significant progress has been made in this one-year program in the areas of InP epitaxial growth and material evaluation, device design and fabrication, and test circuit development. It has been verified that InP Gunn devices offer important advantages over GaAs devices in noise figure performance as wideband amplifiers. Noise figures up to 13 dB lower than flat profile and 7 dB lower than cathode notch profile GaAs devices have been demonstrated. Additionally, as solid state components, they will offer significant advantages over conventional means of providing wideband, high gain, low noise amplification in the millimeter wave frequency range. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1976
- Accession Number
- ADA041329
Entities
People
- R. D. Fairman
- R. J. Hamilton Jr.
- S. I. Long