Purification, Controlled Doping and Crystal Growth of II-VI Compound Semiconductors.

Abstract

The synthesis of various ultra high purity compounds of the II-VI group of semiconductor materials is described and tables of analytical data for each are included. The level of impurity concentration in synthesized ZnSe has been significantly lowered. The growth of crystals of II-VI compounds from the melt in the pressure furnace is reported. Included are data concerning doping of melt grown crystals with various amounts of selected impurities. The overall quality of the melt grown ZnSe has been improved.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1977
Accession Number
ADA041753

Entities

People

  • George N. Webb

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Compound Semiconductors
  • Contamination
  • Crystal Growth
  • Crystal Structure
  • Crystals
  • Elements
  • Flow Rate
  • Gas Flow
  • Grain Boundaries
  • Materials
  • Materials Laboratories
  • Optical Materials
  • Polycrystals
  • Semiconductors
  • Walls

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene