An Investigation of Deep Impurity Levels in GaAs by Photocapacitance and Related Techniques.

Abstract

The purpose of this research program was to investigate the behavior and identity of impurities in high quality liquid phase epitaxial GaAs. Photocapacitance measurements were combined with photoluminescence and other well established techniques to provide a complete electrical characterization of the material. In order to identify possible impurities, similar characterizations were carried out on epitaxial GaAs with Cu impurity added either during layer growth or by diffusion after growth, and on bulk cyrstals of GaAs doped with chromium and oxygen. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1977
Accession Number
ADA042110

Entities

People

  • Richard H. Bube

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Electric Fields
  • Electrical Properties
  • Electron Density
  • Electrons
  • Emission Spectroscopy
  • Energy Levels
  • Engineering
  • Impurities
  • Liquid Phases
  • Materials
  • Materials Science
  • Measurement
  • Military Research
  • Phase
  • Photoluminescence
  • Solid State Physics

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology