Oxidation and Epitaxy.

Abstract

The first order process models for silicon epitaxy and oxidation are described. Epitaxial dopant inclusion, autodoping and transient effects are discussed, and experimental results are presented. Silicon orientation, surface doping, and ambient effects are considered for silicon-oxidation rates. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1977
Accession Number
ADA042244

Entities

People

  • D. A. Antoniadis
  • J. D. Meindl
  • Krishna C. Saraswat
  • R. W. Dutton
  • T. I. Kamins

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundary Layer
  • Chemical Reactions
  • Electronics Laboratories
  • Epitaxial Growth
  • Equations
  • Gas Flow
  • Heat Of Activation
  • High Temperature
  • Low Temperature
  • Measurement
  • Orientation (Direction)
  • Oxidation
  • P-N Junctions
  • Semiconductors
  • Silicon Compounds
  • Temperature Gradients
  • Vapor Pressure

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology