Transferred Electron Logic Device (TELD) Development.
Abstract
The objectives of this research program are (i) to develop planar GaAs transferred-electron logic devices (TELDs) and (ii) to fabricate and evaluate a four-bit correlator. The major accomplishments in this phase of the program were (i) significant progress in the advancement of basic device technology; (ii) the use of active devices as nonlinear loads; and (iii) the fabrication of critical building blocks. TELDs of the improved design type have been fabricated and evaluated. The previously used electrolytic thinning technique has been extended to GaAs wafers of the n(+)-n-n(-)type. The n(+) capping layers provide better ohmic contacts to the device and thus reduce the threshold voltage values. A capacitive pickoff output electrode has been added to the standard TELD structure. This new structure eliminates some of the memory and stability problems associated with the standard TELDs. A two-bit correlator circuit has been fabricated and evaluated. To improve the compatability of TELD input and output signal levels, active (FET) devices have been used as either load resistors or trigger elements. Pulses as small as 150 ps were processed through TELD-FET inverters with a 2-4 voltage gain. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1977
- Accession Number
- ADA042354
Entities
People
- J. F. Wilhelm
- L. C. Upadhyayula
- R. E. Smith
Organizations
- RCA Corporation