Lightweight GaAs(P) Semiconductor Injection Lasers.
Abstract
Fabrication and test of single element lasers demonstrated that devices built using planar techniques were superior to rectangular parallelepiped devices and, at room temperature, gave 5 watts peak power output for a current input of 40 amps peak, having a duration of 100 nanoseconds at a repetition rate of 1KHz. Higher repetition rates for the planar device gave less degradation in performance than that obtained from the rectangular parallelepiped geometry. Using the planar devices, a sixteen element array was constructed whose emitting area was within the confines of a TO-5 header. 55 watts peak power output was demonstrated on this device for a current pulse of 40 amps peak power having a duration of 100 nanoseconds at a repetition rate of 4 KHz. The array average power output was then 22 mw. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1969
- Accession Number
- ADA042493
Entities
People
- George M. Craford
- Robert O. Herendeen
- Warren O. Groves
Organizations
- Monsanto