Advanced Development on Gallium Phosphide Materials for Satellite Attitude Sensors.
Abstract
The objective of this research program is to develop the solution-growth technology of GaP so that crystals of sufficient size and uniformity can be produced for Air Force photodetector applications. To accomplish this objective, two growth techniques, bulk solution growth (BSG) and liquid epitaxy (LPE), have been developed. LPE has been successfully developed as a crystal growth technique capable of producing high-performance GaP: Cu photoconductors. An advanced slider technique is used to grow 0.6 sq. cm. layers. These layers have been characterized by C-V and photoconductivity analysis. The spectral response of the photoconductivity of these LPE layers exhibits an extremely broad spectral response from 2.25 to 5.0 eV. Photoconductive gains in the range 10,000 to 100,000 have been measured. The photoconductive response times are in the 1 to 10 msec range, and spatial uniformity of -10 percent over a 3-mm slit length has been achieved. BSG is phosphorus diffusion-controlled growth from a gallium solution. The preferred variation of this technique provides an elemental phosphorus source rather than the compound GaP. The technique is called synthesis-solute-diffusion (SSD). During this program, the SSD technique was developed for the growth of single-crystal GaP. Single crystals as large as 1.2 cm diameter x 1 cm long were grown which were inclusion free. Dislocation densities 1000/sq.cm. were measured. The grown material has been evaluated by Hall, IR spectroscopy and capacitance techniques.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1977
- Accession Number
- ADA042784
Entities
People
- M. W. Scott
- P. E. Petersen
- R. G. Schulze
Organizations
- Honeywell International, Inc.