Second Breakdown Behavior of a Single Microplasma p-n Junction.

Abstract

This report describes the results of pulsed measurements of the voltage across a p-n junction. The junction was formed by alloying aluminum into n-type silicon to form a pyramidal structure, the apex being the breakdown site. Voltages at second breakdown were related to junction temperature by way of the temperature dependence of the avalanche breakdown voltage. The temperature measurements support a thermal runaway mechanism for second breakdown. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1976
Accession Number
ADA043126

Entities

People

  • Larry J. Stotts
  • William M. Portnoy

Organizations

  • Texas Tech University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Avalanche Diodes
  • Electronics Laboratories
  • Engineering
  • Failure Mode And Effect Analysis
  • Frequency
  • Heat Transmission
  • Ionizing Radiation
  • Leading Edges
  • Measurement
  • Modules (Electronics)
  • P-N Junction Diodes
  • P-N Junctions
  • Power Electronics
  • Semiconductor Devices
  • Semiconductor Junctions
  • Semiconductors
  • Thermal Instability

Fields of Study

  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Thin Film Deposition Science.