Electronic Properties of III-V Semiconductor Interfacial Layers.

Abstract

Results have been obtained on the use of neutralized ion beam sputtering of Si3N4 on GaAs for MIS applications and on classical and quantum electrical transport in InAs epilayers. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1977
Accession Number
ADA043250

Entities

People

  • Hudson A. Washburn
  • James R. Sites.
  • Larry G. Meiners

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Ceramic Materials
  • Charge Carriers
  • Dielectrics
  • Electrical Properties
  • Electron Density
  • Electron Mobility
  • Electrons
  • Films
  • Gallium Arsenides
  • Ion Beams
  • Magnetic Fields
  • Measurement
  • Semiconductor Devices
  • Semiconductors
  • Solar Cells

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing