Neutron Damage in Silicon from Neutrons with Energy Near 1-MeV.
Abstract
Silicon diodes have been used to evaluate the damage introduced in silicon by monoenergetic neutrons at several neutron energies near 1 MeV. Eight diodes were irradiated at each of the neutron energies; 0.70, 0.96, 1.16, 1.63 and 2.37 MeV. The results are compared with diodes exposed to 14 MeV neutrons and with calculations of displacement (permanent) damage. It is shown that the damage fluctuates severely for neutron energies near 1 MeV. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1977
- Accession Number
- ADA043268
Entities
People
- C. E. Hollandsworth
- J. E. Youngblood
- W. R. Van Antwerp
Organizations
- Ballistic Research Laboratory